Malaysian Journal of Analytical Sciences Vol 19 No 6 (2015): 1303 - 1308

 

 

 

PERFORMANCE OF ORGANIC THIN FILM TRANSISTORS (OTFTs) AT VARIOUS TEMPERATURES ON POLYETHYLENE TEREPHTHALATE (PET) SUBSTRATE

 

(Prestasi Transistor Organik Filem Nipis (OTFTs) pada Suhu yang Berbeza di atas Substrat Polietilena Tereftalat (PET)

 

Nurhazwani Musa1*, Mohd Noor Ahmad1, Nurul Farhanah Abd Halim1, Uda Hashim2, A. K. M. Shafiqul Islam3

 

1School of Material Engineering,

Universiti Malaysia Perlis, Kompleks Pusat Pengajian Jejawi 2,

Taman Muhibbah, 02600 Jejawi, Arau, Perlis, Malaysia

2 Institute of Nano Electronic Engineering,

Universiti Malaysia Perlis, Lot 106, 108 & 110, Blok A, Taman Pertiwi Indah,

Jalan Kangar-Alor Setar, Seriab 01000 Kangar, Perlis, Malaysia

3Faculty of Engineering Technology,

Universiti Malaysia Perlis, 02100 Sungai Chuchuh, Padang Besar, Perlis, Malaysia

 

*Corresponding author: nurhazwani9389@yahoo.com

 

 

Received: 23 November 2014; Accepted: 3 September 2015

 

 

Abstract

Fabrication of organic thin film transistors (OTFTs) on a flexible substrate has been the subject of much attention in the sensor research community as its cost effective, low temperature processing, ease of fabrication, disposability and delivery of accurate result. The OTFTs with pentacene as active layer and polymethyl methacrylate (PMMA) as gate insulator was fabricated and its performance was investigated. The PMMA and pentacene thin films were coated on indium tin oxide coated polyethylene terephthalate (PET) substrate by a spin coating method. The substrates temperature were varied at 40, 60, 80 and 100 oC prior to the deposition of aluminum onto the interdigitated electrodes (IDE) structure via physical vapour deposition (PVD) method. The atomic force microscopy (AFM) images and current-voltage (I-V) relationship indicated that the variation of substrate temperature has an impact on both physical and electrical properties of pentacene thin film transistors. The AFM images show that the morphological grain size increased as the substrate temperature was increased.  In addition, the I-V measurement using SPA shown that the source-drain current of OTFTs was highest at temperature 100 oC.

 

Keywords:    Organic Thin Film Transistors (OTFTs), pentacene, Polyethylene Terephthalate (PET) substrate, Polymethyl Methacrylate (PMMA)

 

Abstrak

Fabrikasi transistor organik filem nipis (OTFTs) di atas substrat fleksibel telah menjadi perhatian dalam komuniti penyelidikan sensor kerana berkos sederhana, suhu pemprosesan rendah, mudah difabrikasi, pakai buang dan memberikan keputusan yang tepat. OTFTs dengan mnggunakan pentasina sebagai lapisan aktif dan polimetil metakrilat (PMMA) sebagai pintu penebat telah difabrikasi dan prestasinya dikaji. PMMA dan filem nipis pentasina disediakan di atas substrat indium timah oksida bersalut polietilena tereftalat (PET) melalui kaedah salutan putaran dan suhu permukaan dipelbagaikan pada 40, 60, 80 dan 100 oC sebelum elektod interdigitated (IDE) aluminium dihasilkan melalui kaedah pemendapan wap fizikal (PVD) pada substrat. Gambar daya mikroskop daya atom (AFM) dan hubungan voltan semasa (I-V) telah menunjukkan bahawa suhu teleh memberi impak terhadap sifat fizikal dan elektrik transistor filem nipis pentasina tersebut.  Gambar AFM menunjukkan bahawa saiz butiran morfologi bertambah apabila suhu permukaan meningkat. Di samping itu, ukuran I-V menggunakan SPA menunjukkan bahawa arus punca-saliran OTFTs adalah tinggi pada suhu 100 oC.

 

Kata kunci:    Organik filem nipis (OTFTs), pentasina, Substrat Polietilena Tereftalat (PET), Polymetil Metakrilat (PMMA)

 

References

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